Abstract
High-frequency (GHz range) Diamond SAW resonators with good temperature stability have been developed by using a SiO_2/ZnO/diamond structure. According to Lesson's model, in order to obtain low phase noise, the resonators should have large power durability regarding resonators in oscillator circuit. This paper describes the improvements in power durability that were made by improving the structure of the diamond SAW resonators. The improved structure differs from the conventional structure only in that it has an additional thin film of ZnO between the SiO_2 and IDTs. It was found that the resonator of the improved structure was capable of withstanding input power 20 dB higher than that of the conventional structure.
