2-06P-34 Growth of c-axis oriented LiNbO_3 films on ZnO/SiO_2/Si substrate by pulsed laser deposition for surface acoustic wave applications(Poster session 2)
Highly c-axis oriented LiNbO_3 (006) thin films with thickness of 2.5 μm have been successfully grown on SiO_2/Si substrates with a ZnO buffer layer by XeCl excimer pulsed laser deposition (PLD) technique. The full width at half maximum intensity (FWHM) of LiNbO_3 (006) peak of the sample fabricated under the optimum deposition parameters is only 0.18°. The center frequency and phase velocity of the LiNbO_3/ZnO/SiO_2/Si substrate with line width of 4μm is 188 MHz and 3010 m/s, respectively.
