e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Advance online publication
Displaying 1-3 of 3 articles from this issue
  • Hanming Zhu
    Article type: Regular Paper
    Subject Area: Thin Films
    Article ID: 2024-014
    Published: April 11, 2024
    Advance online publication: April 11, 2024
    JOURNAL OPEN ACCESS ADVANCE PUBLICATION

    Reducing the surface optical loss and broadening the spectral response range is an effective method to improve the power conversion efficiency of the multi-junction solar cells. We simulated the different HLHL (high/low/high/low index) antireflection coatings (ARCs) for the triple-junction solar cells based on an optical transfer matrix. From the ARC optimization results, the total effective reflectivity (Re) of ZnS/MgF2/ZnS/MgF2 is the lowest among HLHL ARCs, which is 1.34%, best Re at the region of interest appeared to be 5.03% for the top solar cell, 1.20% for the middle solar cell, and 0.93% for the bottom solar cell. Moreover, the effects of thickness, refractive index, and incident angle on the performance of the ZnS/MgF2/ZnS/MgF2 ARC were analyzed. It was found that the thickness of each film decreases when it deviates from the optimal theoretical value, and the appropriate reduction of MgF2 refractive index can reduce total Re. The ZnS/MgF2/ZnS/MgF2 ARC exhibits remarkable antireflection properties over a broad wavelength and a wide angular range. The experimental results showed that the reflectance spectrum of ZnS/MgF2/ZnS/MgF2 is basically consistent with the theoretical curve.

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  • A. S. Saidov, M. Kalanov, D. V. Saparov, Sh. N. Usmonov, D. A. Eshonkh ...
    Article type: Regular Paper
    Subject Area: Thin Films
    Article ID: 2024-012
    Published: April 04, 2024
    Advance online publication: April 04, 2024
    JOURNAL OPEN ACCESS ADVANCE PUBLICATION

    This paper presents the results of experimental studies of the structural characteristics of the epitaxial layers of GaAs1−xyZnSexGey solid solutions grown from a bismuth solution-melt on GaAs substrates with (100) crystallographic orientation. The grown epitaxial film of the GaAs1−xyZnSexGey solid solution is a single crystal with a sphalerite-like structure with the (100) orientation corresponding to the substrate orientation. It is shown that ZnSe molecules partially replace GaAs molecules in defect-capable regions of the (100) matrix crystal lattice at the high-potential sites.

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  • Takeo Nakano, Kosuke Kimura, Yuto Iijima, Masato Takeuchi, Kei Oya, Ma ...
    Article type: Regular Paper
    Subject Area: Thin Films
    Article ID: 2024-013
    Published: April 04, 2024
    Advance online publication: April 04, 2024
    JOURNAL OPEN ACCESS ADVANCE PUBLICATION

    Mode transitions in reactive sputtering of metal (Ti, V) oxides are studied. Under a controlled Ar gas pressure at a flow rate of 10 sccm, direct current sputtering plasma was generated. The oxygen flow rate Q and discharge power P were changed in two ways (Q was varied at fixed P, and vice versa), and the mode transitions were monitored using the state jump in the discharge voltage. When the transition points (P, Q) were plotted as two-dimensional (2D) maps, the metal-to-oxide and oxide-to-metal transition points were found to be located on two corresponding straight lines that passed through the origin, irrespective of how the parameters were varied. The origin of this behavior is discussed and ascribed to the linear relationship between the input power and the sputter etching rate of the target. These results also suggest that the metal-mode, hysteresis, and oxide-mode regions of the 2D map can be determined by a few pilot experiments. By depositing vanadium oxide films under conditions in the oxide-mode region, near its boundary, films with very similar optical properties could be obtained.

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