An internal potential profile formed between In₂O₃ and a-Se₉₀Te₁₀ was investigated by using the Valence Alternation Pairs model and introducing degree of disorder for chalcogenide glasses. As the results, the potential barrier width formed on a-Se₉₀Te₁₀ was estimated whose value was larger than 4200Å. The value was experimantally obtained by using time of flight technique in qualitatively agreement with the theoretical calculation.

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