Effects of substrate temperature on the growth rate and morphology of diamond films synthesized by the flame CVD has been investigated. Experiments have been conducted with the flat premixed acetylene/hydrogen/oxygen flames of the velocity gradient of 3500 s-1 and the equivalence ratio of 2.35, 2.40 and 2.45. The nucleus growth rate of diamond at high substrate temperature is higher than that at low substrate temperature. The growth rate of diamond films is found to be sensitive to the substrate temperature when the equivalence ratio is 2.45 and found to become higher with the substrate temperature. On the other hand, crystallites come to contain many “reentry grooves” that can be the sites of secondary nucleation, yielding deterioration of the film quality, at substrate temperatures higher than about 1200 K. When the equivalence ratio is 2.40 or lower, the growth rate is found to decrease in the temperature range 1100-1200 K of the substrate. In addition, it is further observed that crystallites with {111} facets are dominant at temperatures lower than 1200 K, while some crystallites with {100} facets are observed at temperatures higher than 1200 K. These experimental observations strongly suggest that the growth mechanism of the diamond film changes at the substrate temperature around 1200 K according to the change of precursors and the enhancement of etching of sp3 diamond.
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