Using the atmospheric pressure plasma chemical vapor deposition (CVD) technique, further investigations were performed to improve the density of silicon nitride (SiN
x) films deposited at extremely high deposition rate. The films were prepared on Si(001) wafers at atmospheric pressure in a very high frequency (150MHz) plasma of gas mixtures containing He, H
2, SiH
4 and NH
3. Si-N, Si-H and N-H bond densities of the SiN
x films were studied as functions of NH
3/SiH
4 ratio and the H
2 concentration by Fourier transformation infrared (FTIR) absorption spectroscopy. Etching rate with buffered HF (BHF) solution, refractive index and relative permittivity of the SiN
x films were also studied as a function of Si-N bond density of those films. It is found that by decreasing NH
3/SiH
4 ratio or increasing H
2 concentration, Si-N and Si-H bond densities increase, while N-H bond density decreases. It is also noticed that N-H bond density is larger than Si-H bond density within the present deposition conditions, indicating that the SiN
x films are N-rich. These facts suggest that elimination of excessive hydrogen atoms bonded with N atoms at the film-growing surface is an important factor to form SiN
x film with a dense Si-N network. The highest Si-N bond density and then the lowest hydrogen content are obtained for the film deposited with the H
2 concentration of 20% and the input power of 1000W.
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