e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -IWAMN2009-
Systematic Study of the 4ƒ Electronic State in RRhIn5 and RCu2Si2 (R: Rare Earth)
Tetsuya TakeuchiNguyen Van HieuNguyen Duc DungYuji TakedaYasunori NakanoKiyohiro SugiyamaRikio SettaiYoshichika OnukiTatsuma D. MatsudaEtsuji YamamotoYoshinori Haga
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2011 Volume 9 Pages 446-453

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Abstract
Systematic study of the 4ƒ electronic state in RRhIn5 and RCu2Si2 has been done by using single crystalline samples which were successfully grown by the flux method. Most of RRhIn5 compounds order antiferromagnetically at low temperatures, except when R=Y, La, Pr and Yb. The observed anisotropic features in the magnetic susceptibility and magnetization have been analyzed on the basis of the crystalline electric field (CEF) model. The observed anisotropy in the magnetic susceptibility in the paramagnetic state is well explained by the CEF effect. Specific heat measurements on a series of ternary compound RCu2Si2 have been performed by the quasi-adiabatic heat pulse method in the temperature range down to 100 mK. We observed the nuclear specific heat at low temperatures and estimated the magnitude of internal effective magnetic field Heff at the nucleus in RCu2Si2. [DOI: 10.1380/ejssnt.2011.446]
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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
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