JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 77th JSAP Autumn Meeting 2016
Session ID : 14p-P9-6
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Ohmic contact formation for n+ 4H-SiC substrate by selective heating method using hydrogen radical irradiation
Tetsuji AraiKazuki KamikuraChiaya YamamotoMai ShirakuraKeisuke ArimotoJunji Yamanaka*Kiyokazu NakagawaToshiyuki TakamatsuMasaaki OginoMasaaki TachiokaHaruo Nakazawa
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Keywords: 14p-P9-6, SiC, ohmic contact
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© 2016 The Japan Society of Applied Physics
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