Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing

Dependences of Poly-Si Grain on Energy Density and Shot Number

Abstract

This paper examines the characteristics of the poly-Si grains formed by ELA with the energy density from 75 mJ/cm² to 400 mJ/cm², and discusses the change of the crystal growth mechanism of the recrystallized poly-Si dependent on the energy density. For the energy density from 250 mJ/cm² to 350 mJ/cm², the disk-shaped grains are observed. The dependences of the area ratio of disk-shaped grain both on the energy density and on the shot number are examined. From these results, the role of the disk-shaped grains for the change of the crystal growth mechanism dependent on the energy density is clarified.