This paper examines the characteristics of the poly-Si grains formed by ELA with the energy density from 75 mJ/cm
2 to 400 mJ/cm
2, and discusses the change of the crystal growth mechanism of the recrystallized poly-Si dependent on the energy density. For the energy density from 250 mJ/cm
2 to 350 mJ/cm
2, the disk-shaped grains are observed. The dependences of the area ratio of disk-shaped grain both on the energy density and on the shot number are examined. From these results, the role of the disk-shaped grains for the change of the crystal growth mechanism dependent on the energy density is clarified.
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