Abstract
A resist dot-pattern adhering on a substrate can be removed precisely by applying a certainload with an atomic force microscope tip.The applying load for the pattern destruction isreflected strongly by the adhesion force of the resist pattern.In this paper,we propose a quantitative and statistical method foranalyzing the destruction property.Concretely,the destructionproperty of KrF excimer laser chemically amplified resist is analyzed by this method.The reliability of this method is evaluated with the threshold load and the number of initial failurepatterns.The pattern collapsed easily when the cohesion strength of resist material is relativelylow,because certain pattern residue can be observedonthesubstrate.Then,thedestructionforceforArFexcimerlaserchemicallyamplifiedresistwasalsoanalyzedbythismethod.Astressdistributedinaresistpatternisalsocalculatedbythree-dimensionalfiniteelementmethod・Theresidueformationofdot-patternsisstronglyaffectedbythestressconcentrationatavicinityofinterface.
