Proceedings of Annual / Fall Meetings of Atomic Energy Society of Japan
2010 Fall Meeting
Session ID : O06
Conference information
Experimental Verification of Silicon Cross sections for Neutron Transmutation Doping
*Haksung KIMCheol Ho PYEONJae-Yong LIMTsuyoshi MISAWA
Author information
CONFERENCE PROCEEDINGS FREE ACCESS

Details
Abstract
A numerical evaluation of radial uniformity in Neutron Transmutation Doping of silicon is largely affected by silicon cross sections. In this study, the exact use of silicon cross sections in numerical analysis is investigated through the neutron irradiation experiments of Si-ingot. And the numerical results with silicon single cross sections revealed the good agreement with experiment results within 4% error, whereas the discrepancy is approximately 20% at the maximum in case of free gas cross section.
Content from these authors
© 2010 Atomic Energy Society of Japan
Previous article Next article
feedback
Top