Abstract
A numerical evaluation of radial uniformity in Neutron Transmutation Doping of silicon is largely affected by silicon cross sections. In this study, the exact use of silicon cross sections in numerical analysis is investigated through the neutron irradiation experiments of Si-ingot. And the numerical results with silicon single cross sections revealed the good agreement with experiment results within 4% error, whereas the discrepancy is approximately 20% at the maximum in case of free gas cross section.
