Analytical Sciences
Online ISSN : 1348-2246
Print ISSN : 0910-6340
ISSN-L : 0910-6340
Original Papers
Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
Naoto KAMEDATetsuya NISHIGUCHIYoshiki MORIKAWAMitsuru KEKURAKen NAKAMURATomoharu USHIYAMAHidehiko NONAKAShingo ICHIMURA
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2010 Volume 26 Issue 2 Pages 273-276

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Abstract

Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone gas was generated by UV irradiation of highly concentrated ozone gas. During the UV-excited ozone process, UV light irradiates the sample surface directly through the ozone gas. Then, the temperature at the sample surface is increased by UV-light absorption at the surface. Estimation of this surface temperature is important for understanding the oxidation mechanism. We estimated the surface temperature obtained during UV irradiation to be about 300°C by investigating the temperature dependence of the oxidation rate for oxygen gas. We have previously determined that almost no thermal decomposition of ozone gas occurs at this temperature, and that oxygen gas does not oxidize the Si substrate. Therefore, we concluded that the only oxidation species in the UV-excited ozone process is UV-excited ozone O(1D).

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© 2010 by The Japan Society for Analytical Chemistry
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