Non-Destructive Observation of Stacking Faults of Silicon-Wafer by Means of Photoacoustic Microscopy

Abstract

The inspections of stacking faults of Si-wafer were carried out by means of a home-made photoacoustic microscopy (PAM). The stacking faults, which are not observed by an optical microscope, could be measured non-destructively and the depth of stacking faults beneath the surface could also be estimated by PAM.