Analytical Sciences
Online ISSN : 1348-2246
Print ISSN : 0910-6340
ISSN-L : 0910-6340
A Standard Sample Preparation Method for the Determination of Metal Impurities on a Silicon Wafer by Total Reflection X-Ray Fluorescence Spectrometry
Yoshihiro MORIKengo SHIMANOETadashi SAKON
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JOURNAL FREE ACCESS

1995 Volume 11 Issue 3 Pages 499-504

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Abstract

Total reflection X-ray fluorescence spectrometry (TXRF) is widely used for the determination of surface metal contamination on a silicon wafer. In TXRF measurements, calibration standard samples are needed to quantify the metal concentration. We propose a new method for the preparation of calibration standard samples for TXRF. The method is called "Immersion in Alkaline Hydrogen Peroxide Solution (IAP)", in which the silicon wafers are immersed in an intentionally contaminated alkaline hydrogen peroxide solution. Samples made by the IAP method are suitable calibration standard samples for TXRF because of their good depth profile reproducibility and good uniformity on the surface as well as homogeneity in a given batch. They can also be applied for making a cross-check among plural TXRF instruments as well as among different analytical methods.

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© The Japan Society for Analytical Chemistry
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