High-Sensitivity Total Reflection X-Ray Fluorescence Spectroscopy of Silicon Wafers Using Synchrotron Radiationt

Stephen S. LADERMAN; Alice Fischer-COLBRIE; Ayako SHIMAZAKI; Kunihiro MIYAZAKI; Sean BRENNAN; Noritaka TAKAKURA; Piero PIANETTA; Jeffrey B. KORTRIGHT

doi:10.2116/analsci.11.515

Stephen S. LADERMAN, Alice Fischer-COLBRIE, Ayako SHIMAZAKI, Kunihiro MIYAZAKI, Sean BRENNAN, Noritaka TAKAKURA, Piero PIANETTA, Jeffrey B. KORTRIGHT

Author information

Stephen S. LADERMAN
Hewlett-Packard Laboratories, Hewlett-Packard Company
Alice Fischer-COLBRIE
Hewlett-Packard Laboratories, Hewlett-Packard Company
Ayako SHIMAZAKI
Integrated Circuit Advanced Process Engineering Department, Toshiba Corporation
Kunihiro MIYAZAKI
Integrated Circuit Advanced Process Engineering Department, Toshiba Corporation
Sean BRENNAN
Saanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
Noritaka TAKAKURA
Saanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
Piero PIANETTA
Saanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center
Jeffrey B. KORTRIGHT
Center for X-ray Optics, Lawrence Berkeley Laboratory, University of Calfornia

Keywords: Total reflection X-ray fluorescence (TXRF, TRXRF), synchrotron radiation, silicon, VLSI, ULSI, wafer cleaning, microcontamination, synthetic multilayer, multilayer X-ray monochromator

JOURNAL FREE ACCESS

1995 Volume 11 Issue 3 Pages 515-518

DOI https://doi.org/10.2116/analsci.11.515

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Abstract

We explored total reflection X-ray fluorescence spectroscopy (TXRF) with a synchrotron source to achieve high sensitivities to surface metals on silicon wafers. Most recently, we directly demonstrated a sensitivity of 3×10⁸atoms/cm² for third-row transition metal elements. The configuration appears to be capable of high sensitivities for a wide range of elements.

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