Characterization of III-V Semiconductor Materials by Surface- Sensitive Analytical Techniques A Review

Abstract

Applications of surface-sensitive analytical techniques to research and development of III-V semiconductor materials are illustrated. The studies reviewed are related to the understanding of various aspects of material processing such as epitaxial growth by molcular beam epitaxy, diffusion of group II elements in InP, ion implantation of n- and p-type dopant species, and dry etching in chlorine-containing discharges. In addition, impurity-induced layer disordering of quantum well heterostructures and superlattices will be discussed. Examples are drawn from a number of analytical techniques sensitive to the surface and to the interface. Special emphasis is given to GaAs and InP which are currently under study most extensively.