Abstract
The effects of the ion optics of the SNMS (secondary neutral mass spectrometry) INA-3 system on the intensity ratios, from which the relative sensitivity factors can be calculated, have been investigated for several III-V semiconductors: GaAs, GaP, and InP. It was found that the intensity ratios change significantly, depending on the electrode potentials of the ion optics and on the mass difference (M) between the major constituent elements: within 90% regions of optimum electrode voltages and between M=6 and 84amu, the maximum total relative deviation of relative intensities increases from about 10% to 250%.
