抄録
Atmospheric pressure microplasmas were applied to synthesize hydrogenated diam ond like carbon films on a silicon substrate using a gas mixture of CH 4 /He/H 2 . The film deposition was carried out by moving a substrate. For the films synthesized by a CH 4 /He plasma, the surface hardness increased from 7.7 GPa to 10 3 GPa with increasing substrate temperature from 100 to 300 due to dehydrogenation. Furthermore, the surface hardness increased from 10 GPa to 18 GPa with H 2 addition of 10% to a CH 4 /He plasma at substrate temperature of 300 ℃℃. The sp 3 /(sp 3 +sp 2 and (sp 3 CH+ sp 3 CH 2 sp 3 CH+ sp 3 CH 2 +sp 3 CH 3 ratios of the films increased from 48.5 to 52.6% and from 53.7 to 7 3 5 with H 2 addition of 10%, respectively. A nd typical deposition rate of 1.8 μm/s w a s attained at a condition of H 2 addition of 10% and substrate temperature of 300
https://ror.org/01ms51d52 
