抄録
Metal ions were generated by sputtering metal targets using a short-pulse-operated
high-power impulse magnetron sputtering (HiPIMS) technology. The pulse duration was 25 μs
with a maximum source voltage of -2600 V, which efficiently facilitated ionization of the
sputtered metal species. Six-inches of titanium (Ti), aluminum (Al), copper (Cu), carbon (C)
disks were used as the target materials. Argon was used as sputtering gas with gas pressure from
0.3 to 4.0 Pa. The applied voltage of -2600 V was used to generate magnetron plasma with
current of 100 A. The results showed that the metal ions were produced with order of 1018 m-3 in
ion density. The ion density increased with decreasing gas pressure and increasing applied
voltage. The sputtered metal ion density depended on target material properties such as sputter
yield and ionization rate.
https://ror.org/04cd75h10 
