Abstract
Reactive-etching system used etching a superconducting thin film. We obtained etching condition of superconductor (NbN) thin film. Etching speed is depends on etching time. Become known by no means proportion atching time. Next, insulator (MgO) layer etching process used low pressure Ar gas. This is mechanical energy etching. Etching speed is so late and give a photo resist damaged in a surface region on the collision with ionization Ar gas molecular. Bat insulator layer is about 10 [nm] value size that the little damage. Also a study of reactive-etching technology makes it clear that etching mechanism. Reactive-etching is secondary function relation was found between etching quantity and etching time at RF power is constant. Mechanical energy etching quantity is in direct proportion to etching time at RF power is constant.
