Abstract
By the use of a reflection spectrophotometer, the interference phenomenon by a single optical layer is made visible in the epitaxial layer made of single crystalline semiconductors such as Si and Ge.
The interference in the infrared region 5-16μ is essentially the same as that observed on thin wafers of single crystalline materials provided that the effect of slanting incidence and the phase shift by reflection are duely considered.
The relation between the thickness of the layer and the separations between adjacent interference maxima in wave number units is correctly represented by an empirical formula as v=C/T where C is a constant.
By the use of the interference phenomeon, measurement of the thickness of the epitaxial layer is found to be possible within an error of 0.3μ for samples of 3-20μ in thickness.
