実数値遺伝的アルゴリズムを用いたCVD装置における成膜速度分布の計算方法(3)

高橋 崇宏; 稲垣 妙香; 成合 真吾; 児玉 純一; 荒川 正幹; 江間 義則

doi:10.11545/ciqs.2013.0.P13.0

36th Symposium on Chemical Information and Computer Sciences, Tsukuba

DOI https://doi.org/10.11545/ciqs.2013.0.P13.0

Conference information

Host: Division of Chemical Information and Computer Science, The Chemical Society of Japan

Co-host: The Pharmaceutical Society of Japan, Japan Society for Bioscience, Biotechnology, and Agrochemistry, The Japan Society for Analytical Chemistry, Society of Computer Chemistry, Japan, Japanese Society for Information and Systems in Education (Approaval)

Poster Session

A calculation method of deposition profiles in CVD reactors using real-coded genetic algorithms (3)

*Takahiro Takahashi, Taeka Inagaki, Shingo Nariai, Junichi Kodama, Masamoto Arakawa, Yoshiori Ema

Author information

Keywords: chemical vapor deposition (CVD), growth rate, thin film, genetic algorithms (GA)

CONFERENCE PROCEEDINGS FREE ACCESS

Pages P13

Details

Abstract

We proposed a novel calculation method to reproduce the deposition profiles in CVD reactors. We formulated the governing equations of the batch-type reactor with round-shaped substrates and showed that these reactors had a few basis functions, which consist of the concentration profiles of the deposition species under various conditions.

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