Abstract
In our group we have found that the room temperature bonding of Si/Si and Si/CMP-Cu using the surface activated bonding method could be successfully applied to vacuum sealing, while we have not clarified quantitatively the influence of surface profiles on sealing quality. For that, we have investigated the relationship between contact ratio and leak rate, and critical contact ratio Pc at which no leak path existed at the bonding interface. As a result, for example, we found that the Pc of the as-sputtered Au surface with 0.46 nm rms surface roughness was about 0.52.
