Direct Patterning of Poly(Ether sulfone) using a Cross-linker and a Photoacid Generator

Abstract

A negative-type photosensitive poly(ether sulfone) (PSPES) based on PES, a novel cross-linker 4,4'-methylene-bis[2,6-bis(methoxymethyl)phenol] (MBMP) having good miscibility with PES, DIAS as a PAG has been developed.This resist consisting of PES/MBMP/DIAS=85/10/5wt% showed a high sensitivity of 21 mJ/cm2 and a contrast of 2.1 when it was exposed to i-line post-exposure baked (PEB) at 170oC for 3 min, and developed with DMAc at room temperature. A fine negative image featuring 4 um L&S pattern was obtained on the film exposed to 150 mJ/cm2 of i-line.