Preparation of Anatase-TiO₂ by Elevated-Temperature Deposition and Annealing in Oxygen Ambient

Abstract

Titanium dioxide (TiO₂) films were deposited on silicon substrates using RF sputtering at room temperature (T_sub=R.T.) and elevated temperature (T_sub=300°C). After deposition, TiO₂ films were annealed at various temperatures (400-900°C) for 1 h in Ar and O₂ ambient, and phase transition from anatase to rutile was investigated using XRD spectra. The weight fraction of anatase in TiO₂ films deposited at T_sub=300°C were larger than that in the films deposited at T_sub=R.T. when they were annealed at temperatures under 600°C. There was no significant difference between Ar and O₂ annealing whether the TiO₂ films were deposited at T_sub=R.T. or T_sub=300°C. Annealing in O₂ ambient was not effective to obtain anatase-TiO₂ in the films using the experimental conditions in this study. [DOI: 10.1380/ejssnt.2012.186]