Fabrication of an Array of Ni/NiO Nanowire-ReRAM Using AAO Template on Si

Abstract

The resistive switching random access memory (ReRAM) device using Ni/NiO nanowire as a building block was demonstrated; this is prepared by a combination of top-down and bottom-up techniques. The Ni nanowire arrays on Si substrates were prepared by electroplating of Ni into the anodic aluminum oxide (AAO) template, and the surface of the nanowires were oxidized by O₂ plasma treatment at room temperature. We observed an improvement of stability of the switching properties in the nanowire device compared with the device using nickel oxide thin film. [DOI: 10.1380/ejssnt.2012.476]