e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
Conference -ACSIN-12&ICSPM21-
Carbon Nanowall Field Effect Transistors Using a Self-Aligned Growth Process
Toshio KawaharaSatarou YamaguchiYasuhide OhnoKenzo MaehashiKazuhiko MatsumotoKazumasa OkamotoRisa UtsunomiyaTeruaki Matsuba
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2014 Volume 12 Pages 225-229

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Abstract

Nano-carbons such as carbon nanotubes and graphenes are very promising as next-generation materials, and field effect transistors (FETs) can be used with nano-carbon channels. In these nano-carbon materials, carbon nanowalls (CNWs) are constructed with a few layers of graphene and exhibit properties similar to those of graphene. We have developed a self-aligned process for CNWs using grapho-epitaxy. We have grown CNW channels on several line and space patterns fabricated by electron beam lithography and reactive ion etching. When the line and space pattern is suitable, self-aligned CNWs can be made by plasma-enhanced CVD. We also discuss the electrical properties (IDS-VDS characteristics) of the self-aligned CNW-FETs resulting from several growth temperatures and deposition times. [DOI: 10.1380/ejssnt.2014.225]

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