e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -ISSS-7-
Growth Characteristics of Graphene Film by Chemical Vapor Deposition Method Using Nozzle Gas Injection
Yusuke MatsuuraHideki SatoHideto MiyakeKazumasa Hiramatsu
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2015 Volume 13 Pages 265-268

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Abstract

Graphene has attracted much attention due to its many unique properties and potential applications. It is considered that a chemical vapor deposition (CVD) method is a promising for growth method of graphene. We have examined growth characteristics of graphene by means of a low-pressure alcohol catalytic CVD (LP-ACCVD) method. Here nozzle gas injection is used to supply carbon source gas to a substrate. This method enables efficient supply of carbon source gas to a substrate for the growth of graphene. Therefore, an efficient growth and lowering of the growth temperature of graphene is expected. [DOI: 10.1380/ejssnt.2015.265]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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