e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Conference -ALC '15-
Oxidation at Cs Pre-Adsorbed Si/6H-SiC(0001)-(3 × 3) Reconstructed Surfaces Studied Using Metastable-Induced Electron Spectroscopy
Tomonori IkariTakuto NakamuraKaede HirayamaKousuke MuraokaJunko IshiiMasamichi Naitoh
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2016 Volume 14 Pages 103-106

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Abstract

A Si-covered 6H-SiC(0001) surface was transformed from a Si-rich to C-rich one with increasing annealing temperature. An alkali metal is well known for promoting oxidation. We studied the oxidation to Cs pre-adsorption on a 6H-SiC(0001)-(3 × 3) reconstructed surface using metastable-induced electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), and low-energy electron diffraction (LEED). The (3 × 3) reconstructed surfaces was adsorbed Cs and exposed oxygen at room temperature. The MIES results show that the intensity of electron emission induced Cs6s increased with Cs evaporation. For the oxygen-exposed Cs/SiC surface, the emission intensity of the Cs6s-induced peak rapidly decreased and a dissociated adsorption oxygen-induced peak appeared. When the oxygen-adsorbed Cs/SiC(0001) surface was annealed until 800°C, Cs atoms were desorbed from the surface and O bonded with Si, forming SiO2. [DOI: 10.1380/ejssnt.2016.103]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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