Abstract
ZnO nanoparticle (NP) layers were formed using a simple drop casting process. Applying thermal pressing clearly improved the surface morphology and electrical properties of the as-deposited ZnO NP layers as well as significantly enhanced the transistor characteristics of the NP layers. The effects of thermal pressing on the film surface properties were evaluated by X-ray photoelectron spectroscopy, Kelvin probe microscopy, and photoluminescence spectroscopy. Results suggest that thermal pressing improved the transistor characteristics by decreasing NP surface defects such as oxygen vacancies. [DOI: 10.1380/ejssnt.2016.175]
