Chemical State Modification of 4H-SiC by Ultraviolet-Ray Aided Machining

Abstract

An ultraviolet-ray aided machining (U-RAM), which attempts to add a chemical reaction through ultraviolet-ray irradiation to a mechanical polishing, is a promising procedure to obtain a flat surface of SiC in a short time. In order to investigate how chemical states change in the U-RAM process, we have performed X-ray absorption fine structure measurements. As a result, it was found that a mixed compound other than SiO₂ was produced on the SiC surface by the U-RAM. We think that polishing efficiency of U-RAM is better than ordinary mechanical polishing because of generating the mixed compound of Si—C—O. [DOI: 10.1380/ejssnt.2018.283]