Nano-dimensional analysis for practical materials using the nano-beam SIMS apparatus

M. Nojima; M. Toi; A. Maekawa; B. Tomiyasu; T. Sakamoto; M. Owari; Y. Nihei

doi:10.1380/ejssnt.2004.131

Conference -ALC'03-

Nano-dimensional analysis for practical materials using the nano-beam SIMS apparatus

M. Nojima, M. Toi, A. Maekawa, B. Tomiyasu, T. Sakamoto, M. Owari, Y. Nihei

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Keywords: Secondary ion mass spectroscopy, Vacuum science and technology, Ion bombardment, Nano-electronics and related devices, Nano-scale imaging, measurement, and manipulation technology

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2004 Volume 2 Pages 131-135

DOI https://doi.org/10.1380/ejssnt.2004.131

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Abstract

We have been developing the nano-beam secondary ion mass spectrometry (SIMS) apparatus, which can realize high spatial resolution and high efficiency of secondary ion detection. In this paper, the nano-beam SIMS method was introduced for the purpose of characterization for practical materials: contact holes. Contrasts of ion induced secondary electron (ISE) image and ion induced secondary ion (ISI) image were different. The difference was discussed with respect to information depth and chemical sensitivity. Elemental maps were obtained with nano-dimension and the maps provided many aspects of the sample. [DOI: 10.1380/ejssnt.2004.131]

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