Annealing Effect of Absorbing Property for Cs and CsI in Fullerene Investigated by Synchrotron X-ray Photoelectron Spectroscopy

Abstract

We investigated the effect of annealing on the depth concentration profile of the fullerene C₆₀ material exposed to Cs or CsI vapor, as a potential absorber of Cs-135 by angle-resolved X-ray photoelectron spectroscopy. The effects of mild annealing at around 200°C, vapor dosing under heating at around 200°C, and the characteristic desorption behavior that occurs at higher temperatures were investigated. It was found that, after annealing at 280°C or higher, Cs remains in the C₆₀ films whereas CsI is de sorbed.