Abstract
Indium was deposited onto the Si(111)-7× 7 reconstruction in order to form an ordered array structure of In nanoclusters. Using scanning tunneling microscopy, the annealing effects on the 0.12-monolayer (ML)-In nanoclusters and 0.24-ML-In nanoclusters have been investigated. In the case of 0.12-ML-In, four types of adsorption mechanism including the clustering of In atoms are observed after annealing at 300°C, while, in the case of 0.24-ML-In, almost all In nanoclusters are maintained after annealing at 300°C. This discrepancy is discussed with the relation between the substitution of In for Si adatoms and the clustering of In atoms. [DOI: 10.1380/ejssnt.2005.244]
