2007 Volume 5 Pages 132-135
We present a model of spatial distribution of electrons, holes, clusters of intrinsic and admixtures (defects of different types) in nanostructured semiconductor thin films. We obtain intermittent, heterogeneous distributions of concentration typical for images of surfaces obtained by scanning tunneling microscopy, atomic-force microscopy and electron microscopy by numerical analyses.[DOI: 10.1380/ejssnt.2007.132]