Hole Subband Dispersion in Space Charge Layers under Pb/Si(001) Surfaces Measured by Angle-Resolved Photoelectron Spectroscopy

Yohei Tanigawa; Sakura Nishino Takeda; Makoto Morita; Takuya Ohsugi; Yukako Kato; Hiroshi Daimon; Masaki Yoshimaru; Takeshi Imamura

doi:10.1380/ejssnt.2009.641

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Hole Subband Dispersion in Space Charge Layers under Pb/Si(001) Surfaces Measured by Angle-Resolved Photoelectron Spectroscopy

Yohei Tanigawa, Sakura Nishino Takeda, Makoto Morita, Takuya Ohsugi, Yukako Kato, Hiroshi Daimon, Masaki Yoshimaru, Takeshi Imamura

Author information

Yohei Tanigawa
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Japan
Sakura Nishino Takeda
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Japan
Makoto Morita
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Japan
Takuya Ohsugi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Japan
Yukako Kato
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Japan
Hiroshi Daimon
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), Japan
Masaki Yoshimaru
Research and Development Department, Semiconductor Technology Academic Research Center (STARC), Japan
Takeshi Imamura
Research and Development Department, Semiconductor Technology Academic Research Center (STARC), Japan

Keywords: Angle resolved photoemission, Reflection high-energy electron diffraction (RHEED), Quantum effects, Lead, Si(001), Hole subband, Effective mass

JOURNAL FREE ACCESS

2009 Volume 7 Pages 641-648

DOI https://doi.org/10.1380/ejssnt.2009.641

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Abstract

The dispersion structure of the hole subband in a p-type space charge layer on Si(001) was investigated for the first time by angle-resolved photoelectron spectroscopy. The space charge layer was made via adsorption of Pb. The dispersion curves were in qualitative agreement with the parabolic dispersion curves with bulk effective masses obtained by the k·p perturbation method. The observed energy levels had smaller binding energy than the levels calculated by the triangle potential approximation. This was interpreted to reflect a change of the dopant atom concentration in the subsurface region due to diffusion of dopant during flashing. [DOI: 10.1380/ejssnt.2009.641]

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