Electric Field Induced Resistance Change of SrFeO2.5-x Film

Shinya Kito; Takeshi Yokota; Shotaro Murata; Yasutoshi Tsuboi; Manabu Gomi

doi:10.1380/ejssnt.2010.346

Conference -ACSIN-10-

Electric Field Induced Resistance Change of SrFeO_2.5-x Film

Shinya Kito, Takeshi Yokota, Shotaro Murata, Yasutoshi Tsuboi, Manabu Gomi

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Keywords: Models of non-equilibrium phenomena, Desorption induced by electronic transitions (DIET), X-ray scattering, diffraction, and reflection, Conductivity, Interface state

JOURNAL FREE ACCESS

2010 Volume 8 Pages 346-348

DOI https://doi.org/10.1380/ejssnt.2010.346

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Abstract

Resistance random access memory (ReRAM) is attractive as a next generation nonvolatile memory. We investigated an electric field induced resistance change of SrFeO_3-x (SFO) film as a candidate of RRAM material. As-deposited SFO film with high oxygen deficiency, which is expected to have a high oxygen percolation, barely showed hysteresis in current-voltage curve. On the other hand, the annealed sample showed a distinct hysteresis. The amount of oxygen in the sample and easiness of oxygen migration play an important role of the resistance switching properties. [DOI: 10.1380/ejssnt.2010.346]

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