2010 Volume 8 Pages 349-353
The phase transition between √3×√3 and 3×3 structures on Sn adsorbed Ge(111) surface is discussed in terms of an order-disorder structural transition. The Monte Carlo calculation is performed to obtain the surface electronic states with a tight-binding model. The calculated reciprocal-space-projected density of states can reproduce both experimental results of the high and low temperature phases by the angle resolved ultraviolet photoemission spectroscopy measurements. [DOI: 10.1380/ejssnt.2010.349]