e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Regular Papers
DFT Calculation for Palladium Supported on S-terminated GaN as Green Chemical Catalyst
Mami YokoyamaShiro TsukamotoAkira Ishii
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2010 Volume 8 Pages 377-380

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Abstract
A novel function of nitried-based semiconductor is successfully developed for organic synthesis, in which palladium supported on the surface of S-terminated GaN(0001) serves as a unique green chemical catalyst. In this study we determined the structure of Pd-catalyst supported on S-terminated GaN(0001) surface by means of the density functional theory (DFT) within a Local Density Approximation (LDA). The important role of S in the case of GaN substrate is to make the number of the valence electron to be close to 0, in contrust to the case of GaAs. [DOI: 10.1380/ejssnt.2010.377]
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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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