Abstract
Electrical and photoresponse properties of Al/porous silicon/crystalline Silicon/Al structure (Al/pSi/c-Si/Al) were investigated. Unoxidized porous Si layer was made on single crystalline p-Si using anodic etching in aqueous HF at a current density of 60 mA/cm2 for 20 min etching time. The structure of porous layer was investigated using SEM and FTIR. The electrical properties of the Al/pSi/c-Si/Al junction were studied using dark I-V, illuminated I-V and C-V measurements. The rise time of the detector was found to be 100 ns and its resposnsivity was 0.38 A/W at 600 nm and 0.44 A/W at 800 nm when the photodetector bias is at —3 V. [DOI: 10.1380/ejssnt.2010.388]
