2011 Volume 9 Pages 138-141
We investigated the relationship between the electric-field-induced resistance change and the magnetoelectric effect of a Cr2O3/La0.7Sr0.3MnO3 (LSMO) magnetic heterostructure. When this heterostructure was field cooled, its magnetization curves exhibited a positive shift due to an exchange bias. Because of the exchange behavior, the LSMO film resistance changed when an electric field was applied to the Cr2O3 gate. This resistance change is probably due to interaction modulation of the magnetoelectric interface between the Cr2O3 and LSMO films. [DOI: 10.1380/ejssnt.2011.138]