e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
Regular Papers
Exciton Binding Energies in ZnSSe/MgSSe Quantum Wells Lattice Matched to GaAs Substrates
Chikara OnoderaMasaaki Yoshida
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2011 Volume 9 Pages 219-223

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Abstract

Exciton binding energies in ZnSSe/MgSSe single quantum wells (SQWs) are calculated to study their exciton properties in detail. The heavy-hole exciton binding energies are larger than the light-hole exciton binding energies in narrow wells because the degree of confinement of the heavy-hole excitons is larger than that of the light-hole excitons in these SQWs. The heavy-hole exciton binding and heavy-hole excitonic transition energies calculated for ZnSSe/MgSSe SQWs are comparable to those measured for ZnSe/MgS quantum wells. [DOI: 10.1380/ejssnt.2011.219]

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この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
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