Local Structure around Ge Atoms in IV-VI Ferromagnetic Semiconductor Ge0.6Mn0.4Te by X-Ray Fluorescence Holography

Naohisa Happo; Yuki Takehara; Makoto Fujiwara; Koichi Tanaka; Shinya Senba; Shinya Hosokawa; Kouichi Hayashi; Wen Hu; Motohiro Suzuki; Hironori Asada

doi:10.1380/ejssnt.2011.247

Conference -Atomic Holography-2010-

Local Structure around Ge Atoms in IV-VI Ferromagnetic Semiconductor Ge_0.6Mn_0.4Te by X-Ray Fluorescence Holography

Naohisa Happo, Yuki Takehara, Makoto Fujiwara, Koichi Tanaka, Shinya Senba, Shinya Hosokawa, Kouichi Hayashi, Wen Hu, Motohiro Suzuki, Hironori Asada

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Keywords: Molecular beam epitaxy, X-ray scattering, diffraction, and reflection, Fluctuation, Magnetic films, Semiconducting films

JOURNAL FREE ACCESS

2011 Volume 9 Pages 247-250

DOI https://doi.org/10.1380/ejssnt.2011.247

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Abstract

Local atomic structure around Ge atoms in Ge_1-xMn_xTe thin film single crystal has been investigated by X-ray fluorescence holography (XFH) at room temperature. Obtained atomic image suggests that the Ge position is not stable at the exact positions of fcc cation sublattice, and reveal the fluctuations of Ge positions and/or the existence of cation vacancies. [DOI: 10.1380/ejssnt.2011.247]

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