PAa10 放射光マイクロビームX線回折法によるスメクティック層電場応答の時分割測定

抄録

The dynamic response of the smectic layer structure upon applying an electric field was measured with ms time resolution by means of micro/macro x-ray diffraction system using synchrotron radiation. From the time resolved macro-beam measurement, the reversible transition from the simple bookshelf (at high voltage) to the horizontal chevron (at low voltage) was observed. However, the x-ray microbeam diffraction revealed that the horizontal chevron structure is always realized at both high and low voltage and that the detailed horizontal chevron structure depends on the stripe position.