主催: 日本液晶学会
会議名: 1999年 日本液晶学会討論会
開催地: 富山大学 五福キャンパス
開催日: 1999/09/29 - 1999/10/01
p. 136-137
When the molecular orientation of a V-shaped switching is discussed and simulated based on experimental results such as SHG and polarized FT-IR, it is important to obtain the information about the layer structure. Layer structure in a homogeneous cell of the chiral smectic phase showing V-shapd switching was investigated in X-ray diffraction measurements. in a less than 2μm-thick homogeneous cell, the three component mixture in which V-shaped switching was first observed, initial structure before applying an electric field forms chevron with the leaning angle of Ca. 20 deg at 50℃. When we applied AC or DC field, chevron layer structure was kept although chevron angle slightly decreases to Ca. 18deg. The preliminary results of the timeresolved X-ray measurement using sychrotron radiation will be also discussed.