日本液晶学会討論会講演予稿集
Online ISSN : 2432-5988
Print ISSN : 1880-3490
ISSN-L : 1880-3490
1999年 日本液晶学会討論会
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PAb09 V字型反転キラルスメクティック液晶の層構造解析
高西 陽一小笠原 豊和石川 謙竹添 秀男高橋 由美子飯田 厚夫
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p. 136-137

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When the molecular orientation of a V-shaped switching is discussed and simulated based on experimental results such as SHG and polarized FT-IR, it is important to obtain the information about the layer structure. Layer structure in a homogeneous cell of the chiral smectic phase showing V-shapd switching was investigated in X-ray diffraction measurements. in a less than 2μm-thick homogeneous cell, the three component mixture in which V-shaped switching was first observed, initial structure before applying an electric field forms chevron with the leaning angle of Ca. 20 deg at 50℃. When we applied AC or DC field, chevron layer structure was kept although chevron angle slightly decreases to Ca. 18deg. The preliminary results of the timeresolved X-ray measurement using sychrotron radiation will be also discussed.

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© 1999 日本液晶学会
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