Proceedings of Japanese Liquid Crystal Society Annual meeting
Online ISSN : 2432-5988
Print ISSN : 1880-3490
ISSN-L : 1880-3490
2011 Japanese Liquid Crystal Society Annual Meeting
Session ID : S4
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Characterization of New Photosensitive and Non-photosensitive Silsesquioxane and Silsesquiazane Polymers
Toshiaki NonakaYuji Tashiro*Daishi Yokoyama
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Abstract
We developed new silsesquioxane and silsesquiazane materials. Silicon polymer preparing high thermal stability and transparency have been researched in electronics field for a long time. Moreover, organic-inorganic hybrid polymer have received considerable interest since its unique characteristic have reported. But structure controlled organic-inorganic hybrid polymer have difficulty in muss production and cost performance. Our developed new Silsesquioxane (SQ) materials have excellent property such as low temperature curable, high pencil hardness, high optical transparency and good linearity. Furthermore, our silsesquioxane materials containing DNQ-PAC have positive typed photosensitive property preparing great resist stripper durability and show good performance from 0.2 m to 10 m of film thickness. New silsesquiazanes (SQAZ) synthesized by new synthesis method provide high refractive index and high optical transparent film. These features meet requirements for dielectric materials of TFT, hard coat material and sealing materials for OLED, LED, Solar Cell devices. Here we demonstrate our product properties as new coating material.
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© 2011 Japanese Liquid Crystal Society
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