Abstract
For flexible display development, amorphous In-Ga-Zn oxide thin film transistors were fabricated on plastic substrate at ambient temperature. The transistor structure was coplanar top-gate. a-IGZO TFTs were fabricated on plastic substrate under ambient temperature. The field-effect mobility (u) was 7.4 cm2/Vs, threshold voltage (Vth) was 0.3 V, subthreshold swing (S) was 0.29 V/decade and on-off current ratio (Ion/off) was 108 on 180 degree annealing process. We examined the stabilization on further low temperature process, thus after annealing at 150 degree, u was 7.4 cm2/Vs, Vth was 0.3 V, S was 0.33 V/decade and Ion/off was 108. Even after environmental testing at 60 degree and 90 % RH for 250 h, there were only slight change in the TFT characteristics. The hysteresis with forward and reverse gate voltage also had a small DVth, 0.5 V.
