日本液晶学会討論会講演予稿集
Online ISSN : 2432-5988
Print ISSN : 1880-3490
ISSN-L : 1880-3490
2020年日本液晶学会オンライン研究発表会
セッションID: 1OB03
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液晶性高分子有機電界効果トランジスタのバイアス・ストレス特性
*坂本 謙二ブルガレビッチ キリル安田 剛三成 剛生竹内 正之
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We have established a simple coating method of polymeric organic semiconductor films onto highly hydrophobic gate dielectric surfaces and fabricated bottom-gate/top-contact type organic field-effect transistors with an active layer of liquid crystalline polymer, poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene). The SiO2 gate dielectric surfaces were treated with octadecyltrichlorosilane (ODTS) or coated with an amorphous perfluoropolymer (CYTOP). Their bias-stress effects were examined in vacuum and air. By changing the coating material from ODTS to CYTOP, the operational stability was significantly improved in both vacuum and air.

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