疎水性ナノグルーブ・ゲート絶縁膜表面が高分子有機電界効果トランジスタの移動度と動作安定性に及ぼす影響

抄録

We have fabricated arrays of bottom-gate/top-contact type organic field-effect transistors (OFETs) having active layers of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C16) and poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4b′]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT). The change in the field-effect mobility and the bias-stress stability by introducing nanogroove structures on the gate dielectric surface was investigated. Anisotropic charge transport and alignment-induced mobility enhancement were clearly observed for both semiconducting polymers. Under the same bias stress conditions, the electrical stability was evaluated and compared. The electrical stabilities of pBTTT-C16 OFETs were found to be higher than those of PCDTPT OFETs, independent of the presence of nanogroove structures on the gate dielectric surfaces.